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| savantic semiconductor product specification silicon npn power transistors 2SD1910 d escription with to-3pfm package high breakdown voltage high speed switching built-in damper diode applications for use in tv horizontal output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a i cm collector current-peak 6 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pfm) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1910 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a , i b =0 600 v v ce(sat) collector-emitter saturation voltage i c =2.5a ; i b =0.8a 5.0 v v be(sat) base-emitter saturation voltage i c =2.5a ; i b =0.8a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 a i ebo emitter cut-off current v eb =6v; i c =0 50 200 ma h fe dc current gain i c =0.5a ; v ce =5v 8 25 v f diode forward voltage i f =3a 2.0 v savantic semiconductor product specification 3 silicon npn power transistors 2SD1910 package outline fig.2 outline dimensions |
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